, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 bd777* bd776* bd779* BD778* bd780* plastic darungton complementary silicon power transistors ... designed for genera! purpose amplifier and high-speed switching applications. ? high dc current gain hfe - 1400 (typ) @ ig - 2.0 adc ? collector-emitter sustaining voltage - @ 10 madc vceo (?"?) - 45 vde (mln) ? bd77b 60 vde (mini ? bd777.778 - bo vde (mln) ? bd779,780 ? reverse voltage protection diode ? monolithic construction with built-in base-emitter output resistor darlington 4-ampere complementary silicon power transistors 46. 60. 80 volts is watts maximum ratings nettle collector-emitter volugt collector-baal voltage emitter- voltage colltctor cumni ? continuous pmk bnt current tout device oivipetian tc ? 25"c - derm ibov* 2s"c operating and stor?g> junction tempereture ren?. vceo vcb veb "c ??o tj.t,,s tj.t,,, b0776 45 46 bo77b 60 60 b0779 80 80 s.o 4.0 6.0 100 15 0.12 - 65w + 150 vdc vde vde ade madc w/?c ?c thermal characteristics thernulrnitunce. junction to cmc r0jc thermal reiiitmce. junction to ambient r0ja 8.34 813 "cnt 'cm figure 1 - power derating l.? 40 s n ioe t. temperature itl im 0.4 140 o e t~ hj~ _, -j 3bh- " lc^f ^ -1 . i 1 k _1 u-v .- ?-a 1c(- ~j u-r u-s i*|0.25(o.oio)?| a?l b? | *-d>h.|+|0.2s(0.010)?| a?| b? | nous: i mbannmiwottxenwcwenm* vi4jm.wb. i cohiwuhblmmicttwch i vr? tmu-eioeennt.*wst*emm tn?. j l jl ii :e 3 1, i ^-?41 i i . i _ -1! _ _u ^j . j m ..mi. . m j :,???. a s ia fitt : : h 1 > ml i t. . jo. .s . b . is1, j: ' ? -4* - ali - . li : jjijfe. : i : 1 0* ,8,r if i ? j,|? 9.11 1 - 1w - phi. anroi i coufcrai 1 m> to-22saatype annular stmteooduciort patented by motorale inc. trademerk of motgrole inc.
bd777, bd779 npn bd776, BD778, bd780 pnp electrical characteristics (tc - 25c unto* mhi id) characteristic svmbol min. max. unit off characteristics collacior-emittir cohtctor-emitttr suiuinino, volugi (1) |io - 10 made. ib - 0) bd776 bd777, b0778 b0779. bo780 collklor cutoff currant 1 vce = 20 vde, ib - 01 b0776 (vce ~ 30 vdc, ib - 01 bd777, BD778 (vce " 40 vdc, ig - 0? 8d779, bo 780 collector cutoff currant ? ie - ? ivcb - rand, vceo ?'. "e ? 0, ic " 100 c) emimr cutoff currant (vbe-s.ovdt, ic"0) on characteristics dc currant g*n llc - 2.0 ade. vce - 3.0 vdcl colltctor-emimr saturation voltagf (lc- 1.5 adc, le- bmadc) b?* emilltr siturition voltigi dc - 1.5 adc. ib - 6 madct bot-emitttf on volup (lc - 1 5 adc. vce - 3 vdc) output diodt volugt drop (iec "2.0 ade) dynamic characteristics currant gain bandwidth product llc - 1.0 adc. vce ~ 2.0 vdc) turn-on tim* llc = 260 ma/vce - 2 v) bo775-777-779 b0776- 778-780 turn oft tim* (lc - 2so ma. vce - 2 v) bo77f>777-77? 8o776-778-780 vc60 (??! 'ceo icbo iebo 45 60 80 100 100 100 1.0 100 1.0 vdc madc made madc hfe vce (sail vbe (sat) vbe (on) vec ?t svmbol |